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DISCRETE SEMICONDUCTORS
DATA SHEET
BLT53 UHF power transistor
Product specification May 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Emitter-ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability * Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT122D studless envelope with a ceramic cap. It is designed for common emitter, class-B operation in portable radio transmitters in the 470 MHz communications band. All leads are isolated from the mounting flange. PINNING - SOT122D PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
1
handbook, halfpage halfpage
BLT53
QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common emitter test circuit. MODE OF OPERATION c.w. class-B f (MHz) 470 7.5 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. VCE (V) 8 PL (W) Gp (dB) >6 c (%) > 60
PIN CONFIGURATION
4
c 3
b
MBB012
e
2
MSB055
Fig.1 Simplified outline and symbol.
May 1991
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation storage temperature range junction operating temperature CONDITIONS open emitter open base open collector DC or average value peak value f > 1 MHz RF operation; Tmb = 25 C - - - - - - -65 - MIN. MAX. 20 10 3 2.5 7.5 35.5 150 200
BLT53
UNIT V V V A A W C C
handbook, halfpage
10
MCD192
handbook, halfpage
50
MCD193
IC (A)
Ptot (W) 40 Tmb = 25 oC 70 oC 30
(3)
(2)
(1)
1 20
10
10-1 1
10
VCE (V)
102
0
0
40
80
120
160 Tmb (oC)
(1) Continuous DC operation. (2) Continuous RF operation (f > 1 MHz). (3) Short time operation during mismatch (f > 1 MHz).
Fig.2 DC SOAR.
Fig.3 Power derating curve.
THERMAL RESISTANCE SYMBOL Rth j-mb(RF) PARAMETER from junction to mounting base CONDITIONS Ptot = 35.5 W; Tmb = 25 C MAX. 4.9 UNIT K/W
May 1991
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE fT Cc PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain transition frequency collector capacitance CONDITIONS open emitter; IC = 20 mA open base; IC = 40 mA open collector; IE = 4 mA VBE = 0; VCE = 10 V VCE = 5 V; IC = 1.2 A VCE = 7.5 V; IE = 1.6 A VCB = 7.5 V; IE = Ie = 0; f = 1 MHz VCE = 7.5 V; IC = 0; f = 1 MHz f = 1 MHz MIN. 20 10 3 - 25 - - TYP. - - - - - 3.9 24
BLT53
MAX. - - - 1 - - -
UNIT V V V mA
GHz pF
Cre
feedback capacitance
-
17
-
pF
Cc-mb
collector-mounting base capacitance
-
1.2
-
pF
MCD194
handbook,80 halfpage
MCD195
handbook,50 halfpage
hFE 60
Cc (pF)
40
30 40 20 20 10
0 0 2 4 IC (A) 6
0
0
4
8
VCB (V)
12
VCE = 5 V.
IE = ie = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current, typical values.
Fig.5
Collector capacitance as a function of collector-base voltage, typical values.
May 1991
4
Philips Semiconductors
Product specification
UHF power transistor
BLT53
MCD196
5 handbook, halfpage fT (GHz) 4
3
2
1
0
0
2
4
IE (A)
6
VCB = 7.5 V.
Fig.6
Transition frequency as a function of emitter current, typical values.
May 1991
5
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Tmb = 25 C in a common emitter test circuit. MODE OF OPERATION c.w. class-B 470 f (MHz) 7.5 VCE (V) 8 PL (W) Gp (dB) >6 typ. 6.8
BLT53
c (%) > 60 typ. 65
handbook, halfpage
10 Gp (dB) 8
MCD197
70
(%) 60
handbook,12 halfpage
MCD198
PL (W)
Gp
8 6 50
4
40 4
2
30
0 0 4 8 PL (W) 12
20
0
0
1
2
3
PD (W)
4
Class-B operation; VCE = 7.5 V; f = 470 MHz.
Class-B operation; VCE = 7.5 V; f = 470 MHz.
Fig.7
Gain and efficiency as functions of load power, typical values.
Fig.8
Load power as a function of drive power, typical values.
Ruggedness in class-B operation The BLT53 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 9 V, and f = 470 MHz.
May 1991
6
Philips Semiconductors
Product specification
UHF power transistor
BLT53
handbook, full pagewidth
input
C2
,,
L1 R1 C3 L2
T.U.T.
,,
L4 L3 C5 R2 C6 L5 +VCC
C7
output
ZS = 50
C1
C8
C4
ZL = 50
MBH107
Fig.9 Class-B test circuit at f = 470 MHz.
List of components (see test circuit) COMPONENT C1, C2, C7, C8 C3, C4 C5 C6 L1 L2 L3 DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor feed-through capacitor polyester capacitor stripline (note 1) 13 turns closely wound enamelled 0.5 mm copper wire 2 turns enamelled 1 mm copper wire VALUE 2 to 9 pF 15 pF 100 pF 33 nF 44 320 nH 41.1 mm x 5 mm int. dia. 4 mm int. dia. 4 mm; pitch 1.5 mm; leads 2 x 5 mm 44 52.7 mm x 5 mm 4312 020 36640 1 , 5% 10 , 5% DIMENSIONS CATALOGUE NO. 2222 809 09002
L4 L5 R1 R2 Note
stripline (note 1) grade 3B1 Ferroxcube wideband HF choke 0.25 W carbon resistor 0.25 W carbon resistor
1. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.74); thickness 116 inch.
May 1991
7
Philips Semiconductors
Product specification
UHF power transistor
BLT53
handbook, full pagewidth
146 41.1 52.7
rivet (4x) 47
L2 input 50 C1 L1 C2 C4 L3 C5 L5 R2 VCC
MBH108
R1
C3 C7 L4 C6 C8
output 50
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of hollow rivets. Dimensions in mm.
Fig.10 Component layout for 470 MHz class-B test circuit.
May 1991
8
Philips Semiconductors
Product specification
UHF power transistor
BLT53
MCD199
3 handbook, halfpage ri Zi () 2
MCD200
4 handbook, halfpage ZL () 2 RL
0
1
xi
-2
XL
0 400
440
480
f (MHz)
520
-4 400
440
480
f (MHz)
520
Class-B operation; VCE = 7.5 V; PL = 8 W.
Class-B operation; VCE = 7.5 V; PL = 8 W.
Fig.11 Input impedance (series components) as a function of frequency, typical values.
Fig.12 Load impedance (series components) as a function of frequency, typical values.
MCD201
handbook,10 halfpage
Gp (dB) 8
6
handbook, halfpage
4
Zi ZL
MBA451
2
0 400
440
480
f (MHz)
520
Class-B operation; VCE = 7.5 V; PL = 8 W.
Fig.13 Definition of transistor impedance.
Fig.14 Power gain as a function of frequency, typical values.
May 1991
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Studless ceramic package; 4 leads
BLT53
SOT122D
D
A
Q c D2
H b
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 4.17 3.27 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D2 7.24 6.98 H 27.56 25.78 L 9.91 9.14 Q 1.58 1.27
90
OUTLINE VERSION SOT122D
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
May 1991
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLT53
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
May 1991
11

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